g l o b a l h e a d q u a r t e r s , 3 n o r t h w a y l a n e n o r t h , l a t h a m , n y 1 2 1 1 0 , u s a w w w . m a r k t e c h o p t o . c o m t o l l f r e e : 1 - 8 0 0 - 9 8 4 - 5 3 3 7 ? p h o n e : 5 1 8 - 9 5 6 - 2 9 8 0 ? f a x : 5 1 8 - 7 8 5 - 4 7 2 5 ? e m a i l : i n f o @ m a r k t e c h o p t o . c o m 1 we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. i t e m s s y m b o l c o n d i t i o n s m i n t y p m a x u n i t physical characteristics & structure electrical & optical characteristics (ta = 25oc) absolute maximum ratings (ta = 25oc) storage temperature led chip infrared while on mylar membrane: 0 to 40 oc after removal from mylar membrane: -30 to 100 oc 2014-04-24 * led chip is mounted on to-18 gold header without resin coating. anode metalization: gold alloy radiation type electrodes infrared algaas n(cathode )up product no: opc 9000-32 continuous maximum forward current: 100ma (dc) reverse voltage: 5v (ir=10ua) material: al gaas bond pad size: 140u m diameter junction si ze: 320u m x 320u m thickness: 160u m cathode metalization: gold alloy unit: um forward voltage vf if= 2 0 ma -- -- 1.6 v reverse voltage v r i r= 10ua 5 -- -- v radiat ed power* e if= 20 ma 2.5 -- -- m w peak wavelength p if= 2 0 ma -- 900 -- nm spectral bandwidth at 50% ? if= 2 0 ma -- 60 -- nm 140 n electrode emission area typ160 p electrode p algaas cladding layer gaas active layer n algaas cladding layer typ320
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